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US 2020/0350019 A1Published application
Non-volatile memory device and programming method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorJi-Sang LEE
Life of this patent
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Abstract
A non-volatile memory device includes: a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a row decoder configured to selectively control the plurality of word lines, a page buffer including a plurality of latches corresponding to the plurality of bit lines, respectively, and a control circuit configured to control the non-volatile memory device to enter a suspend state after terminating a verify operation of a program loop of a program operation of the plurality of memory cells in response to a suspend request being generated during an execution operation of the program loop.
Claims20
A memory system comprising:
- a non-volatile memory device including a plurality of memory cells stacked on a substrate in a vertical direction;
- and
- a memory controller connected to the non-volatile memory via a memory interface,
- wherein the non-volatile memory device is configured to:
- receive a program command and a program data from the memory controller via the memory interface,
- perform a program operation on the plurality of memory cells using the program data in response to the program command,
- receive a first suspend command from the memory controller via the memory interface,
- enter a first suspend state after finishing an execution operation of a first program loop of the program operation in response to the first suspend command,
- receive a first read command and a first read address from the memory controller via the memory interface,
- read a first read data from the plurality of memory cells using the first read address in response to the first read command,
- transmit the first read data to the memory controller via the memory interface,
- receive a first resume command from the memory controller via the memory interface,
- verify the plurality of memory cells in response to the first resume command, and
- execute operation of a second program loop of the program operation using the program data after the verifying the plurality of memory cells in response to the first resume command.
11 more elements
A non-volatile memory device comprising:
- a plurality of memory cells stacked on a substrate in a vertical direction;
- a page buffer including a force latch storing a force data which determines whether to apply a program force voltage to a bit line of a selected memory cell among the plurality of memory cells, and a plurality of data latches storing a program data;
- and
- a control circuit configured to receive a command and control the page buffer in response to the received command,
- wherein the control circuit further configured to:
- receive a program command to perform a program operation on the selected memory cell using the program data,
- receive a first suspend command to suspend the program operation for the selected memory cell,
- initialize one data latch among the plurality of data latches in response to the first suspend command,
- receive a first resume command to resume the program operation, and
- restore a second force data in the force latch by verifying the selected memory cell in response to the first resume command.
7 more elements
A non-volatile memory device comprising:
- a plurality of memory cells stacked on a substrate in a vertical direction;
- and
- a control circuit configured to receive a command and provide a plurality of voltages to a bit line and a word line connected to a selected memory cell among the plurality of memory cells in response to the received command,
- wherein the control circuit further configured to:
- receive a program command to perform a program operation on the selected memory cell using a program data,
- provide a first loop program voltage to the word line connected to the selected memory cell and a first program bit line voltage to the bit line connected to the selected memory cell in response to the program command,
- receive a first suspend command to suspend the program operation for the selected memory cell,
- receive a first resume command to resume the program operation for the selected memory cell,
- provide a first program verify voltage smaller than the first loop program voltage to the word line connected to the selected memory cell in response to the first resume command, and
- provide a second loop program voltage to the word line connected to the selected memory cell and a second program bit line voltage to the bit line connected to the selected memory cell in response to the first resume command.
7 more elements
Dependencies are inferred from the claim text.