Resistive memory apparatus and operating method thereof
AssigneeWinbond Electronics Corp.
InventorsShao-Ching Liao, Ping-Kun Wang
Life of this patent
Estimating the term…
Abstract
A resistive memory apparatus and an operating method thereof are provided. In the method, a set operation having a first enhanced bias is performed on at least one memory cell in a resistive memory array of the resistive memory apparatus, in which the first enhanced bias is larger than a bias used in a normal execution of the set operation. A heat process is performed on the memory cell. A set operation having a second enhanced bias is performed on the memory cell, in which the second enhanced bias is larger than or equal to the first enhanced bias.
Claims12
An operating method of a resistive memory apparatus, the method comprising the following steps:
- performing a set operation having a first enhanced bias on at least one memory cell of the resistive memory apparatus, wherein the first enhanced bias is greater than a bias used in a normal execution of the set operation;
- performing a heat process on the memory cell;
- and
- performing a set operation having a second enhanced bias on the memory cell, wherein the second enhanced bias is greater than or equal to the first enhanced bias.
A resistive memory apparatus, comprising:
- a resistive memory array, comprising a plurality of memory cells;
- and
- a processor, coupled to the memory cells in the resistive memory array, and configured to:
- perform a set operation having a first enhanced bias on at least one of the memory cells, wherein the first enhanced bias is greater than a bias used in a normal execution of the set operation;
- perform a heat process on the memory cell;
- and
- perform a set operation having a second enhanced bias on the memory cell, wherein the second enhanced bias is greater than or equal to the first enhanced bias.
Dependencies are inferred from the claim text.