Fabrication system of semiconductor device and method of fabricating a semiconductor device using the same

A system for fabricating a semiconductor device, the system comprising:

• a chamber;
• an EUV source in the chamber and configured to generate an EUV beam;
• an optical system on the EUV source and configured to provide the EUV beam to a substrate;
• a substrate stage in the chamber and configured to receive the substrate;
• a reticle stage in the chamber and configured to hold a reticle that is configured to project the EUV beam onto the substrate;
• a reticle chuck on the reticle stage and configured to hold the reticle using an electrostatic voltage;
• and
• masking blades between the reticle and the optical system,
• wherein the masking blades are configured to be charged to a bias voltage different from the electrostatic voltage.

A method of fabricating a semiconductor device, the method comprising:

• applying an electrostatic voltage to a reticle chuck of an exposure system;
• generating an EUV beam comprising an intensity having a first pulse;
• providing the EUV beam to a reticle;
• blocking a particle synchronized with the first pulse;
• applying a bias voltage to a masking blade of the exposure system to charge the masking blade;
• and
• providing the EUV beam to a substrate.