Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium
AssigneeKokusai Electric Corporation
InventorsTetsuaki INADA, Hideto TATENO
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AssigneeKokusai Electric Corporation
InventorsTetsuaki INADA, Hideto TATENO
Estimating the term…
A technique capable of exhausting a process gas in a wide pressure range includes a substrate processing apparatus including: a process chamber; a gas supply system configured to supply a process gas containing a compound capable of reacting with a metal; and a gas exhaust system configured to exhaust an inner atmosphere of the process chamber, wherein the gas exhaust system includes: a common exhaust piping; a first exhaust piping made of a resin incapable of reacting with the compound and whose one end is connected to the common exhaust piping via a first valve and the other end is connected to a first exhauster; and a second exhaust piping made of the metal and whose one end is connected to the common exhaust piping via a second valve and the other end is connected to a second exhauster.
A substrate processing apparatus comprising:
A method of manufacturing a semiconductor device comprising:
A non-transitory computer-readable recording medium storing a program that causes, by a computer, a substrate processing apparatus to perform:
Dependencies are inferred from the claim text.