Semiconductor structure and method for fabricating the same

A method of fabricating a semiconductor structure, comprising:

• providing a first wafer;
• providing a second wafer having a first surface, a second surface opposite to the first surface, a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer, wherein the first semiconductor layer, the oxide layer and the second semiconductor layer are disposed between the first surface and the second surface;
• contacting the first surface of the second wafer with the first wafer;
• removing portions of the second semiconductor layer to form a plurality of scribe lines;
• and
• removing portions of the oxide layer exposed from the plurality of scribe lines.

A method of fabricating a semiconductor structure, comprising:

• providing a first wafer;
• providing a second wafer having a first surface, a second surface opposite to the first surface, a first semiconductor layer, an oxide layer disposed over the first semiconductor layer and a second semiconductor layer disposed over the oxide layer, wherein the first semiconductor layer, the oxide layer and the second semiconductor layer are disposed between the first surface and the second surface;
• contacting the first surface of the second wafer with the first wafer;
• removing portions of the second semiconductor layer to form a plurality of scribe lines and a plurality of wafer edge lines;
• and
• cutting from the second surface of the second wafer towards the first wafer and along the plurality of scribe lines and the plurality of wafer edge lines.