Method for Producing a Nitrogen-Free Layer Comprising Silicon Carbide

A method for producing a silicon carbide-containing layer, the layer being nitrogen-free, wherein

• (a) in a first method step, a liquid carbon- and silicon-containing solution or dispersion, in particular a SiC precursorsol, is applied to a carrier,
• (b) in a second method step following the first method step (a), the carbon- and silicon-containing solution or dispersion, in particular the SiC precursorsol, is converted to silicon carbide, wherein the carbon- and silicon-containing solution or dispersion is subjected to a multi-stage thermal treatment, wherein
• (i) in a first thermal process stage (i) the carbon- and silicon-containing solution or dispersion, in particular the SiC precursorsol, is heated to temperatures of 300° C. or higher, in particular 300 to 1800° C., preferably 800 to 1000° C., and
• (ii) in a second thermal process stage following the first thermal process stage (i), the carbon- and silicon-containing solution or dispersion, in particular the SiC precursorsol, is heated to temperatures of 1800° C. or higher, in particular 1800 to 2200° C.