US 2020/0287535 A1 · Method for Operating a Superjunction Transistor Device

Abstract

A method for operating a superjunction transistor device and a transistor arrangement are disclosed. The method includes operating the superjunction transistor device in a diode state. Operating the superjunction transistor device in the diode state includes applying a bias voltage different from zero between a drift region of at least one transistor cell of the superjunction transistor device and a compensation region of a doping type complementary to a doping type of the drift region. The compensation region adjoins the drift region, and a polarity of the bias voltage is such that a pn-junction between the drift region and the compensation region is reverse biased.

Claims15

Dependent claims

A method, comprising:

operating a superjunction transistor device in a diode state,
wherein operating the superjunction transistor device in the diode state comprises applying a bias voltage different from zero between a drift region of at least one transistor cell of the superjunction transistor device and a compensation region of a doping type complementary to a doping type of the drift region,
wherein the compensation region adjoins the drift region,
wherein a polarity of the bias voltage is such that a pn-junction between the drift region and the compensation region is reverse biased.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

16/811,492Filed 6 Mar 2020

Priority

EP 19161485.88 Mar 2019

Published

10 Sep 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H03K 17/06
Electronic switching or gating, i.e. not by contact-making and –breaking: modifications for ensuring a fully conducting state
H10D 30/668
Vertical dmos [vdmos] fets: having trench gate electrodes, e.g. UMOS transistors
H10D 62/111
Reduced surface field [RESURF] PN junction structures: multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
H10D 62/116
Dielectric isolations, e.g. air gaps: adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Method for Operating a Superjunction Transistor Device

Life of this patent

Method for Operating a Superjunction Transistor Device

Life of this patent

Abstract

Claims15