Method for Rapid Testing of Functionality of Phase-Change Material (PCM) Radio Frequency (RF) Switches

(canceled)

21:

• The testing method of claim 19, wherein said ASIC is configured to detect an error when said selected PCM RF switch is not in said OFF state in response to said amorphizing electrical pulse or when said selected PCM RF switch is not in said ON state in response to said crystallizing electrical pulse.

22:

• The testing method of claim 19, further comprising storing said error in said ASIC.

23:

• The testing method of claim 19, further comprising providing, by said ASIC, said error to an external probe.

24:

• The testing method of claim 23, wherein said external probe is coupled to an automatic test equipment (ATE).

25:

• The testing method of claim 19, wherein said ASIC comprises voltage pulse enable transistors configured to select said selected PCM RF switch.

26:

• The testing method of claim 19, wherein a voltage at a PCM contact of said selected PCM RF switch is compared against an OFF state reference voltage (VRefOFF) to determine whether said selected PCM RF switch is in said OFF state in response to said amorphizing electrical pulse.

27:

• The testing method of claim 19, wherein a voltage at a PCM contact of said selected PCM RF switch is compared against an ON state reference voltage (VRefON) to determine whether said selected PCM RF switch is in said ON state in response to said crystallizing electrical pulse.

29:

• The testing method of claim 28, further comprising storing said error in said ASIC.

30:

• The testing method of claim 28, wherein said ASIC comprises voltage pulse enable transistors configured to select said selected PCM RF switch.

31:

• The testing method of claim 28, wherein said detecting said error comprises determining if said selected PCM RF switch is in said OFF state or in said ON state by comparing a voltage at a PCM contact of said selected PCM RF switch against a reference voltage.

32:

• The testing method of claim 31, wherein said voltage at said PCM contact of said selected PCM RF switch is compared against an OFF state reference voltage (VRefOFF) to determine whether said selected PCM RF switch is in said OFF state in response to said amorphizing electrical pulse.

33:

• The testing method of claim 31, wherein said voltage at said PCM contact of said selected PCM RF switch is compared against an ON state reference voltage (VRefON) to determine whether said selected PCM RF switch is in said ON state in response to said crystallizing electrical pulse.

35:

• The testing method of claim 34, further comprising storing said error in said ASIC.

36:

• The testing method of claim 34, further comprising providing, by said ASIC, said error to an automatic test equipment (ATE).

37:

• The testing method of claim 34, wherein said ASIC comprises voltage pulse enable transistors configured to select said selected PCM RF switch.

38:

• The testing method of claim 34, wherein a voltage at a PCM contact of said selected PCM RF switch is compared against an OFF state reference voltage (VRefOFF) to determine whether said selected PCM RF switch is in said OFF state in response to said amorphizing electrical pulse.

39:

• The testing method of claim 34, wherein a voltage at a PCM contact of said selected PCM RF switch is compared against an ON state reference voltage (VRefON) to determine whether said selected PCM RF switch is in said ON state in response to said crystallizing electrical pulse.