Photoelectric conversion element and method for producing the same
AssigneeSumitomo Chemical Company, Limited
InventorsDaisuke FURUKAWA, Daisuke INOKUCHI
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Abstract
To improve detectivity. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, wherein the active layer contains a p-type semiconductor material being a polymer compound having an absorption peak wavelength of 800 nm or more, and an n-type semiconductor material, and the active layer has a thickness of 300 nm or more and less than 600 nm.
Claims13
A photoelectric conversion element comprising:
- an anode;
- a cathode;
- and
- an active layer provided between the anode and the cathode, wherein
- the active layer contains a p-type semiconductor material being a polymer compound having an absorption peak wavelength of 800 nm or more, and an n-type semiconductor material, and
- the active layer has a thickness of 300 nm or more and less than 600 nm.
A method for producing a photoelectric conversion element comprising an anode, a cathode, and an active layer provided between the anode and the cathode, comprising:
- forming the active layer comprising a step (i) of applying an ink containing a p-type semiconductor material being a polymer compound having an absorption peak wavelength of 800 nm or more, an n-type semiconductor material, and a solvent to a subject to be applied, to obtain a coating film, and a step (ii) of removing the solvent from the coating film, wherein
- the active layer has a thickness of 300 nm or more and less than 600 nm.
Dependencies are inferred from the claim text.