US 2020/0287134 A1 · PHASE CHANGE MEMORY STRUCTURE WITH EFFICIENT HEATING SYSTEM

Abstract

A semiconductor device and method of forming a semiconductor device are provided. The semiconductor device includes a pore-type heater having a center pore recess. The semiconductor device further includes a tapered structure formed on the pore-type heater and having a tip portion at least extending down to the center pore recess. The semiconductor device also includes a containment layer confining volatile active material during any of a fabrication and an operation of the semiconductor device performed above a threshold temperature.

Claims20

Dependent claims

A semiconductor device, comprising:

a pore-type heater having a center pore recess;
a tapered structure formed on the pore-type heater and having a tip portion at least extending down to the center pore recess;
and
a containment layer confining volatile active material during any of a fabrication and an operation of the semiconductor device performed above a threshold temperature.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

16/293,167Filed 5 Mar 2019

Published

10 Sep 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification12 codes

H10N 70/882
Switching materials: compounds of sulfur, selenium or tellurium, e.g. chalcogenides
G11C 13/0004
Using resistive RAM [RRAM] elements: comprising amorphous/crystalline phase transition cells
H10N 70/011
Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching: manufacture or…
H10N 70/021
Manufacture or treatment of multistable switching devices: formation of switching materials, e.g. deposition of layers

Phase change memory structure with efficient heating system

Life of this patent

Phase change memory structure with efficient heating system

Life of this patent

Abstract

Claims20