Memory device with boron nitride liner

Abstract

A new liner structure for improving memory cell design is disclosed that incorporates a boron nitride dielectric layer. An example memory device includes an array of memory cells with each of at least some of the memory cells having a stack of layers, the stack comprising at least one phase change layer. A dielectric layer is provisioned over one or more sidewalls of at least the phase change layer. The dielectric layer comprises both nitrogen and boron. The dielectric layer may be part of a liner structure that includes multiple layers, such as an alternating layer stack of boron nitride and silicon nitride. The dielectric layer can be deposited at low temperature (e.g., less than about 300° C.) while maintaining a low hydrogen content and a relatively high thermal conductivity.

Dependencies are inferred from the claim text.