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US 2020/0287127 A1Published application
Spin transfer torque mram with a spin torque oscillator stack and methods of making the same
AssigneeSanDisk Technologies LLC
InventorsQuang LE, Zhanjie LI, Zhigang BAI, Paul VANDERHEIJDEN, Michael HO
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Abstract
A MRAM cell includes a magnetic tunnel junction containing a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer, a spin torque oscillator stack, and a first nonmagnetic spacer layer located between the free layer and the spin torque oscillator stack.
Claims5
A MRAM cell, comprising:
- a magnetic tunnel junction comprising a reference layer having a fixed magnetization direction, a free layer, and a nonmagnetic tunnel barrier layer located between the reference layer and the free layer;
- a spin torque oscillator stack;
- and
- a first nonmagnetic spacer layer located between the free layer and the a spin torque oscillator stack.
1 more element
Dependencies are inferred from the claim text.