Method of producing a radiation-emitting component and radiation-emitting component

A method of producing a radiation-emitting component comprising:

• A) providing a dielectric layer that degrades against environmental influences,
• B) applying a first protective layer to the dielectric layer by an atomic layer deposition method,
• wherein the first protective layer comprises elemental Si or in a compound, and
• C) applying a second protective layer to the first protective layer, the second protective layer comprising elemental Si,
• wherein a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents a degradation of the dielectric layer.

A radiation-emitting component comprising

• a dielectric layer comprising aluminum oxide, and
• a first protective layer arranged on the dielectric layer and configured to encapsulate the dielectric layer against environmental influences,
• wherein at least one of the dielectric layer and the first protective layer is produced by an atomic layer deposition method,
• the first protective layer comprises elemental Si or in a compound,
• a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents a degradation of the dielectric layer, and
• a second protective layer is applied to the first protective layer and the second protective layer comprises elemental Si.

A method of producing a radiation-emitting component comprising:

• A) providing a dielectric layer that degrades against environmental influences, and
• B) applying a first protective layer to the dielectric layer by an atomic layer deposition method,
• wherein the first protective layer comprises elemental Si or in a compound, and
• a layer thickness of the first protective layer is less than or equal to 1 nm so that the first protective layer reduces or prevents degradation of the dielectric layer.