Heterostructure and light-emitting device employing the same
AssigneeBolb Inc.
InventorsJIANPING ZHANG, YING GAO, LING ZHOU
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Abstract
Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.
Claims18
A heterostructure for a light emitting device or a photodetector, comprising one or more p-type doped AlGaN layers, each of the one or more p-type doped AlGaN layers containing one or more sheets of positive charge inserted therein, wherein a distance between two adjacent sheets of positive charge is larger than a depletion depth of a depletion zone generated by any one of the two adjacent sheets of positive charge.
A heterostructure for a light emitting device or a photodetector, comprising alternately stacked p-type doped AlGaN barriers and p-type doped AlGaN wells, wherein a thickness of each of the AlGaN barriers and the AlGaN wells respectively satisfies:
- h
- i
- ≤
- -
- σ
- i
- 2
-
- ρ
- 0
-
- i
- ,
- where hi is the thickness of ith AlGaN barrier or well;
- σi is sheet charge density of a sheet of charge on a surface of the ith AlGaN barrier or well, the surface being oppositely charged in regard to net activated dopant in the ith AlGaN barrier or well;
- and ρ0i=eNDi−eNAi is maximal bulk charge density, allowed by applied doping concentration, in a depletion zone of the ith AlGaN barrier or well generated by the sheet of charge, NDi and NAi are donor and acceptor concentrations, respectively, in the ith AlGaN barrier or well, e is electric elementary charge.
Dependencies are inferred from the claim text.