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US 2020/0287077 A1Published application
Heterostructure and light-emitting device employing the same
AssigneeBolb Inc.
InventorsJIANPING ZHANG, YING GAO, LING ZHOU
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Abstract
Heterostructures containing one or more sheets of positive charge, or alternately stacked AlGaN barriers and AlGaN wells with specified thickness are provided. Also provided are multiple quantum well structures and p-type contacts. The heterostructures, the multiple quantum well structures and the p-type contacts can be used in light emitting devices and photodetectors.
Claims24
A p-type heterostructure as p-type contact layer for a light emitting device or a photodetector, comprising:
- a first AlGaN barrier;
- a first AlInGaN well formed on the first AlGaN barrier;
- a second AlGaN barrier formed on the first AlInGaN well;
- and
- a second AlInGaN well formed on the second AlGaN barrier;
- wherein a difference between an Al-composition of the first AlGaN barrier and an Al-composition of the first AlInGaN well is equal to or larger than 0.6, and a difference between an Al-composition of the second AlGaN barrier and an Al-composition of the second AlInGaN well is equal to or larger than 0.6.
3 more elements
Dependencies are inferred from the claim text.