Semiconductor device

A semiconductor device package comprising:

• a body;
• and
• a semiconductor device disposed on the body,
• wherein the semiconductor device comprises:
• a semiconductor structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
• a first electrode electrically connected to the first conductive semiconductor layer;
• and
• a second electrode electrically connected to the second conductive semiconductor layer, wherein
• the semiconductor structure further comprises a third conductive semiconductor layer disposed between the second conductive semiconductor layer and the second electrode,
• the first conductive semiconductor layer comprises a first dopant,
• the second conductive semiconductor layer comprises a second dopant,
• the third conductive semiconductor layer comprises the first dopant and the second dopant, and
• a concentration ratio between the first dopant and the second dopant with which the third conductive semiconductor layer is doped is in a range of 0.01:1.0 to 0.8:1.0.