US 2020/0287070 A1 · PHOTOELECTRIC CONVERSION ELEMENT

Abstract

To reduce a dark current. In a photoelectric conversion element (10) including an anode (12), a cathode (16), and an active layer (14) provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 μm or more and less than 200 μm per square micrometer of the area of the binarized image.

Claims9

Dependent claims

A photodetector comprising:

an anode;
a cathode;
and
an active layer provided between the anode and the cathode, wherein
the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material, and
on an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, a junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 μm or more and less than 200 μm per square micrometer of area of the binarized image.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/758,126Filed 22 Oct 2018

Priority

JP 2017-20418123 Oct 2017

Published

10 Sep 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification15 codes

G06V 40/1306
Sensors therefor: non-optical, e.g. ultrasonic or capacitive sensing
H10F 30/20
Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors: the…
H10K 30/35
Comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains: comprising inorganic nanostructures, e.g.…
H10K 30/82
Electrodes: transparent electrodes, e.g. indium tin oxide [ITO] electrodes

Photoelectric conversion element

Life of this patent

Photoelectric conversion element

Life of this patent

Abstract

Claims9