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AssigneesHubei University, Wuhan Ruilian ZhiChuang optoelectronic Co Ltd.
InventorsYunbin He, Mingkai Li, Pan Huang, Qile Wang, Yinmei Lu, Gang Chang, Pai Li
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A (GaMe)2O3 ternary alloy material, its preparation method and application in a solar-blind ultraviolet photodetector are provided. The (GaMe)2O3 ternary alloy material of the present invention is formed by solid solution of Ga2O3 and Me2O3 in a molar ratio of 99:1 to 50:50, wherein the Me is any one of Lu, Sc, or Y. The (GaMe)2O3 ternary alloy material of the present invention can be used to prepare the active layer of a solar-blind ultraviolet photodetector. In the present invention, the band gap of Me2O3 is higher than that of Ga2O3, and Ga3+ ions in Ga2O3 are partially replaced by Me3+ ions to obtain a higher band gap (GaMe)2O3 ternary alloy material to reduce the dark current of the device and promote the blue shift of the cut-off wavelength to within 280 nm.
A (GaMe)2O3 ternary alloy material, comprising solid solutions of Ga2O3 and Me2O3 with a molar ratio of 99:1 to 50:50, wherein Me is one element selected from Lu, Sc and Y.
Dependencies are inferred from the claim text.