Photodetector with integrated reflective grating structure
AssigneeInnoLight Technology (Suzhou) Ltd.
InventorsChih-Kuo TSENG, Guoliang CHEN, Xiaoyao LI, Yuzhou SUN, Yue XIAO
Life of this patent
Estimating the term…
Abstract
A photodetector with an integrated reflective grating structure includes a substrate, an active layer disposed on the substrate, and a grating structure disposed between the substrate and the active layer. A first doped region is formed on the substrate at a location near the grating structure. A second doped region is formed on a surface of the active layer away from the grating structure. The doping type of the second doped region is different from that of the first doped region.
Claims16
A photodetector with an integrated reflective grating structure, comprising:
- a substrate;
- an active layer disposed on the substrate;
- a grating structure disposed between the substrate and the active layer;
- a first doped region formed on the substrate at a location near the grating structure;
- and
- a second doped region formed on a surface of the active layer away from the grating structure,
- wherein the doping type of the second doped region is different from that of the first doped region.
A method for manufacturing a photodetector with an integrated reflective grating structure, comprising:
- providing a substrate;
- doping the substrate to form a first doped region and forming a grating structure above the first doped region, or, forming a grating structure on the substrate and doping the substrate below the grating structure to form a first doped region;
- forming an active layer on the grating structure;
- doping an upper portion of the active layer to form a second doped region;
- and
- forming a PIN structure from the active layer and the first and second doped regions, the first and second doped regions having different doping types.
Dependencies are inferred from the claim text.