Fast recovery inverse diode

A method comprising:

• (a) forming a structure in a semiconductor wafer, wherein the wafer has a bottom semiconductor surface and a top semiconductor surface, wherein there is a die area of the semiconductor wafer, wherein the die area has four peripheral side edges, and wherein the structure comprises:
• a bottomside P type silicon region that extends upward from the bottom semiconductor surface and that also extends laterally outwardly to the four peripheral side edges of the die area, wherein the bottomside P type silicon region has a P type dopant concentration of less than 8×1017 atoms/cm3;
• an N− type silicon region disposed over the bottomside P type silicon region within the die area;
• an N+ type silicon contact region that extends downward from the top semiconductor surface and into the N− type silicon region;
• and
• a P type silicon peripheral sidewall region that laterally rings the N− type silicon region, wherein the P type silicon peripheral sidewall region and the bottomside P type silicon region together are parts of a P type isolation structure that extends from the top semiconductor surface to the bottom semiconductor surface, and wherein each of the N− type silicon region, the N+ type silicon contact region, the P type silicon peripheral sidewall region, and the bottomside P type silicon region is of bulk silicon wafer material;
• (b) ion implanting hydrogen ions through the bottom semiconductor surface such that a deep layer of hydrogen ions is formed, wherein the deep layer of hydrogen ions has a distribution disposed about a hydrogen ion local concentration peak surface, and wherein the hydrogen ion local concentration peak surface extends through the N− type silicon region but does not extend through the bottomside P type silicon region;
• (c) implanting ions through the bottom semiconductor surface such that a shallow layer of ions is formed, wherein the shallow layer of ions has a distribution disposed about an ion local concentration peak surface, wherein the ion local concentration peak surface is disposed between the deep layer of hydrogen ions and the bottom semiconductor surface, and wherein the ions of the shallow layer of ions are ions taken from the group consisting of hydrogen ions and helium ions;
• and
• (d) forming a topside passivation layer such that the topside passivation layer is disposed over a part of the top semiconductor surface.