Multi-state transistor devices with multiple threshold voltage channels

A multi-state nanosheet transistor device, comprising:

• at least two differentially doped nanosheet layer segments between two source/drains, wherein each of the differentially doped nanosheet layer segments has a different dopant concentration from the other differentially doped nanosheet layer segments;
• a gate dielectric layer on each of the differentially doped nanosheet layer segments;
• and
• a gate electrode on the gate dielectric layer to form a common gate-all-around structure, where each of the differentially doped nanosheet layer segments conducts current at a different threshold voltage.

A multi-state fin field effect transistor device, comprising:

• a bottom source/drain region on a substrate;
• at least two differentially doped vertical fins on the bottom source/drain region, wherein each of the differentially doped vertical fins has a different dopant concentration from the other differentially doped vertical fins;
• a top source drain on each of the at least two differentially doped vertical fins, where the top source drain is on the opposite end of the differentially doped vertical fins from the bottom source/drain region;
• a gate dielectric layer on each of the differentially doped vertical fins;
• a work function layer of the gate dielectric layer;
• and
• a gate fill layer on the work function layer to form a common gate structure on the at least two differentially doped vertical fins, where each of the differentially doped vertical fins conducts current at a different threshold voltage.