Metal-assisted single crystal transistors

A back-end-of-line (BEOL) transistor comprising:

• a dielectric material;
• a single crystalline semiconductor material on the dielectric material, the single crystalline semiconductor material to form a channel region of the BEOL transistor;
• and
• a source contact, a drain contact, and a gate contact over the single crystalline semiconductor material.

A method for fabricating a back-end-of-line (BEOL) transistor, the method comprising:

• forming a metal in an interlayer dielectric (ILD);
• growing a semiconductor material on the metal by metal-assisted epitaxy to cause the semiconductor material to form on the ILD;
• removing a first portion of the semiconductor material that is on the metal to leave a second portion of the semiconductor material that is on the ILD;
• and
• forming the BEOL transistor using the second portion of the semiconductor material that is on the ILD.

A computer system comprising:

• a circuit board;
• and
• an integrated circuit (IC) die coupled to the circuit board, the IC die including an array of back-end-of-line (BEOL) transistors, wherein individual BEOL transistors of the array of BEOL transistors include:
• a first contact that corresponds to a first one of a source contact or a drain contact;
• a first region on the first contact, wherein the first region corresponds to a first one of a source region or a drain region;
• a channel region on the first region;
• a second region on the channel region, wherein the second region corresponds to a second one of a source region or a drain region;
• and
• a second contact on the second region, wherein the second contact corresponds to a second one of a source contact or a drain contact;
• wherein the first region, the channel region, and the second region are single crystalline semiconductor materials.