Dual-gate thin film transistor, manufacturing method thereof, array substrate and display device

A dual-gate thin film transistor, comprising:

• a base substrate;
• a first gate disposed on the base substrate;
• a first gate insulating layer disposed on the first gate, the first gate insulating layer comprising a first via hole exposing a portion of the first gate;
• an active layer disposed on the first gate insulating layer, the active layer and the first gate at least partially overlapping with each other in a direction perpendicular to the base substrate;
• a second gate insulating layer disposed on the active layer;
• a first electrode and a second electrode, which are disposed in contact with the active layer;
• a second gate disposed on the second gate insulating layer, the second gate and the active layer at least partially overlapping with each other in a direction perpendicular to the base substrate, and the second gate, the first electrode and the second electrode formed in a same layer;
• and
• a connection electrode electrically connected with the second gate and electrically connected with the first gate through the first via hole.