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US 2020/0287047 A1Published application
Semiconductor device having fins
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsShu-Hao KUO, Jung-Hao CHANG, Chao-Hsien HUANG, Li-Te LIN, Kuo-Cheng CHING
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Abstract
A device includes a semiconductor substrate, a first fin arranged over the semiconductor substrate, and an isolation structure. The first fin includes an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion. A top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin. The isolation structure surrounds the bottom portion of the first fin.
Claims20
A device, comprising:
- a semiconductor substrate;
- a first fin over the semiconductor substrate, the first fin comprising an upper portion, a bottom portion, and an insulator layer between the upper portion and the bottom portion, wherein a top surface of the insulator layer is wider than a bottom surface of the upper portion of the first fin;
- and
- an isolation structure surrounding the bottom portion of the first fin.
1 more element
A device, comprising:
- a semiconductor fin comprising a bottom portion extending from a substrate, a middle portion over the bottom portion and an upper portion over the middle portion;
- a gate structure crossing the semiconductor fin;
- a liner layer lining a sidewall of the middle portion of the semiconductor fin and a top surface and a sidewall of the bottom portion of the semiconductor fin;
- an isolation structure over the liner layer;
- and
- a source/drain epitaxy structure grown on the upper portion of the fin structure.
3 more elements
A device, comprising:
- a first fin comprising a bottom portion, an upper portion, and an insulator layer between the bottom portion and the upper portion;
- a second fin free from the insulator layer;
- and
- an isolation structure extending continuously from the first fin to the second fin, wherein the isolation structure comprises a first portion adjacent the first fin and a second portion adjacent the second fin, and a bottom surface of the first portion of the isolation structure is higher than a bottom surface of the second portion of the isolation structure.
1 more element
Dependencies are inferred from the claim text.