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US 2020/0287038 A1Published application
Power device with low gate charge and low figure of merit
AssigneeInfineon Technologies Americas Corp.
InventorYang Gao
Life of this patent
Estimating the term…
Abstract
A device includes a cell, wherein each cell includes a body having a main top surface and a main bottom surface, a gate on the main surface on the device having a first length, a gate isolation layer over the gate having a second length at least twice as long as the first length, a source contact in the device body adjacent to the gate, a source metal layer over the gate isolation layer, and a drain on the main bottom surface of the cell.
Claims20
A device comprising a cell, wherein each cell comprises:
- a body comprising a main top surface and a main bottom surface;
- a gate on the main surface on the device having a first length;
- a gate isolation layer over the gate having a second length at least twice as long as the first length;
- a source contact on a side of the cell body proximate to the gate;
- a source metal layer over the gate isolation layer;
- and
- a drain on the main bottom surface of the cell.
4 more elements
A device comprising a cell, wherein each cell comprises:
- a gate stripe having a first edge and a second edge;
- a source stripe on a side of the device cell extending along and being overlapped by the first edge of the gate stripe;
- and
- a charge reduction stripe extending along the second edge of the gate stripe.
1 more element
A method of fabricating a device cell, the method comprising:
- forming a gate on a main surface of the device cell having a first length;
- forming a gate isolation layer over the gate having a second length at least twice as long as the first length;
- forming a source contact on a side of the device cell proximate to the gate;
- forming a source metal layer over the gate isolation layer;
- and
- forming a drain on a main bottom surface of the device cell.
3 more elements
Dependencies are inferred from the claim text.