Source to channel junction for iii-v metal-oxide-semiconductor field effect transistors (mosfets)

A method for forming a semiconductor device, the method comprising:

• forming a channel area above a substrate, wherein the channel area includes a first III-V material;
• forming a source area above the substrate, wherein the source area includes a second III-V material, an interface between the channel area and the source area includes the first III-V material;
• and
• forming a barrier layer within the source area, wherein the barrier layer includes a third III-V material, and a current is to flow between the source area and the channel area through the barrier layer.

A computing device, comprising:

• a processor;
• and
• a memory device coupled to the processor, wherein the memory device or the processor includes a transistor comprising:
• a substrate;
• a channel area above the substrate and including a first III-V material;
• and
• a source area above the substrate and including a second III-V material, wherein an interface between the channel area and the source area includes the first III-V material, the source area includes a barrier layer of a third III-V material above the substrate, and a current is to flow between the source area and the channel area through the barrier layer.