Semiconductor device

A semiconductor device including an IGBT region having an IGBT therein, a diode region having a diode therein, and a MOSFET region having a MOSFET therein, the semiconductor device comprising:

• a semiconductor substrate including first and second main surfaces;
• a drift layer of a first conductivity type provided in the semiconductor substrate;
• a base layer of a second conductivity type provided in the semiconductor substrate, the base layer being selectively disposed adjacent to the first main surface side relative to the drift layer;
• and
• an anode layer of the second conductivity type provided in the semiconductor substrate, the anode layer being selectively disposed adjacent to the first main surface side relative to the drift layer, wherein
• the drift layer is shared among the IGBT region, the diode region, and the MOSFET region, the base layer is shared between the IGBT region and the MOSFET region, and the anode layer is used in the diode region,
• the IGBT region and the MOSFET region each include a buried conductive layer buried in a region extending from the first main surface into the drift layer through the base layer with an insulating film interposed between the buried conductive layer and the base layer and the drift layer,
• the IGBT region and the MOSFET region each include a MOS gate structure where the buried conductive layer serves as a gate electrode, the insulating film serves as a gate insulating film, and the base layer serves as a channel region, and
• the diode region is disposed between the IGBT region and the MOSFET region to cause the IGBT region and the MOSFET region to be separated from each other without being adjacent to each other.