US 2020/0287027 A1Published application

Semiconductor device

AssigneeMurata Manufacturing Co., Ltd.

InventorsYasunari UMEMOTO, Isao OBU, Kaoru IDENO, Shigeki KOYA

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Abstract

A semiconductor device includes a collector layer, a base layer, and an emitter layer that are disposed above a substrate. An emitter mesa layer is disposed on a partial region of the emitter layer. In a plan view, the base electrode is disposed in or on a region which does not overlap the emitter mesa layer. The base electrode allows base current to flow to the base layer. In the plan view, a first edge forming part of edges of the emitter mesa layer extends in a first direction, and a second edge forming part of edges of the base electrode faces the first edge. A gap between the first edge and the second edge in a terminal portion located in an end portion of the emitter mesa layer in the first direction is wider than a gap in an intermediate portion of the emitter mesa layer.

Claims20

Dependent claims

A semiconductor device comprising:

a collector layer;
a base layer;
an emitter layer;
an emitter mesa layer disposed in a partial region of the emitter layer,
the collector layer, the base layer, the emitter layer, and the emitter mesa layer being disposed above a substrate,
the collector layer, the base layer, and the emitter layer being stacked in this order, and
the emitter mesa layer having a first edge extending in a first direction in a plan view;
and
a base electrode disposed in or on a region which does not overlap the emitter mesa layer in the plan view and that allows base current to flow to the base layer,
the base electrode having a second edge extending in the first direction in the plan view, the second edge of the base electrode facing the first edge of the emitter mesa layer, and
wherein a gap between the first edge and the second edge in a terminal portion located in an end portion of the emitter mesa layer in the first direction is wider than a gap between the first edge of the emitter mesa layer and the second edge in an intermediate portion of the emitter mesa layer in the first direction.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/810,492Filed 5 Mar 2020
Priority: JP 2019-0406906 Mar 2019
Published: 10 Sep 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification11 codes

H10D 10/80
Bipolar junction transistors [BJT]: heterojunction BJTs
H10D 10/821
Heterojunction BJTs: vertical heterojunction BJTs
H10D 62/108
By having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination…
H10D 62/116
Dielectric isolations, e.g. air gaps: adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions

Family

US 11,631,758 B2Related patent
US 2020/0287027 A1This patent

From the US filing history. Foreign family members aren’t listed.

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