Method For Non-Resist Nanolithography

A method comprising:

• forming a patterned sacrificial layer over a substrate, the patterned sacrificial layer having a first opening exposing the substrate;
• forming a first patterned mask in the first opening, the first patterned mask having a second opening exposing the substrate;
• after forming the first patterned mask in the first opening, forming a second patterned mask in the second opening;
• removing the first patterned mask, the second patterned mask and the patterned sacrificial layer remaining after the removing, the second patterned mask and the patterned sacrificial layer forming a combined patterned mask;
• forming trenches in the substrate corresponding to the combined patterned mask;
• and
• forming semiconductor devices from portions of the substrate between neighboring trenches.

A method comprising:

• forming a patterned sacrificial layer covering a first region of a substrate;
• forming a first patterned mask covering a second region of the substrate without using photolithography;
• after forming the first patterned mask, forming a second patterned mask covering a third region of the substrate without using photolithography;
• removing the first patterned mask to expose the second region of the substrate;
• etching the second region of the substrate to form trenches in the substrate;
• and
• forming semiconductor devices from portions of the substrate between neighboring trenches.