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US 2020/0287019 A1Published application
Field-effect transistors with diffusion blocking spacer sections
AssigneeGlobalfoundries Inc.
InventorsGeorge R. Mulfinger, Hong Yu, Man Gu, Jianwei Peng, Michael Aquilino
Life of this patent
Estimating the term…
Abstract
Structures for a field-effect transistor and methods of forming a field-effect transistor. A gate structure of the field-effect transistor is arranged over an active region comprised of a semiconductor material. A first sidewall spacer is arranged adjacent to the gate structure. A second sidewall spacer includes a section arranged between the first sidewall spacer and the active region. The first sidewall spacer is composed of a low-k dielectric material.
Claims21
A structure comprising:
- a semiconductor region comprised of a semiconductor material;
- a gate structure over the semiconductor region;
- a first sidewall spacer adjacent to the gate structure, the first sidewall spacer comprised of a low-k dielectric material;
- and
- a second sidewall spacer including a section arranged between the first sidewall spacer and the active region,
- wherein the low-k dielectric material contains carbon, and the section of the second sidewall spacer is comprised of silicon nitride.
3 more elements
(canceled)
A structure comprising:
- a semiconductor region comprised of a semiconductor material;
- a gate structure over the semiconductor region;
- a first sidewall spacer adjacent to the gate structure, the first sidewall spacer comprised of a low-k dielectric material;
- and
- a second sidewall spacer including a section arranged between the first sidewall spacer and the active region,
- wherein the low-k dielectric material is a carbon-doped silicon oxide, and the section of the second sidewall spacer is comprised of silicon nitride.
3 more elements
A method comprising:
- forming a first gate structure over semiconductor region comprised of semiconductor material;
- forming a first sidewall spacer adjacent to the first gate structure;
- and
- forming a first section of a second sidewall spacer arranged between the first sidewall spacer and the semiconductor region,
- wherein the first sidewall spacer is comprised of a low-k dielectric material, and the low-k dielectric material contains carbon, and the section of the second sidewall spacer is comprised of silicon nitride.
2 more elements
18-19. (canceled)
Dependencies are inferred from the claim text.