Semiconductor device and manufacturing method of semiconductor device
AssigneeUnited Semiconductor Japan Co., Ltd.
InventorsToru Anezaki, Fumitaka Ohno
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a gate electrode disposed over the semiconductor substrate and extending in a first direction, a dummy gate electrode disposed over the semiconductor substrate away from the gate electrode and extending in the first direction, a first semiconductor area of a first conductive type disposed in a surface layer portion of the semiconductor substrate between the gate electrode and the dummy gate electrode, and a conductor electrically connecting the first semiconductor area with the dummy gate electrode.
Claims16
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode disposed over the semiconductor substrate and extending in a first direction;
- a dummy gate electrode disposed over the semiconductor substrate away from the gate electrode and extending in the first direction;
- a first semiconductor area of a first conductive type disposed in a surface layer portion of the semiconductor substrate between the gate electrode and the dummy gate electrode;
- and
- a conductor electrically connecting the first semiconductor area with the dummy gate electrode.
A manufacturing method for manufacturing a semiconductor device, comprising:
- forming a gate electrode over a semiconductor substrate, the gate electrode extending in a first direction;
- forming a dummy gate electrode over the semiconductor substrate away from the gate electrode, the dummy gate electrode extending in the first direction;
- forming a first semiconductor area of a first conductive type in a surface layer portion of the semiconductor substrate between the gate electrode and the dummy gate electrode;
- and
- forming a conductor electrically connecting the first semiconductor area with the dummy gate electrode,
- wherein the forming the gate electrode and the forming the dummy gate electrode include exposing a photoresist and developing the photoresist by using a single exposure mask on which a pattern for the gate electrode and a pattern for the dummy gate electrode are formed.
Dependencies are inferred from the claim text.