Semiconductor device

A semiconductor device, comprising:

• a semiconductor body including a first semiconductor layer of a first conductivity type;
• a first electrode provided on a back surface of the semiconductor body;
• and
• a second electrode provided on a front surface of the semiconductor body,
• the semiconductor body further including a second semiconductor layer of a second conductivity type provided between the first semiconductor layer and the second electrode,
• the second semiconductor layer including a first region and a second region arranged along the front surface of the semiconductor body, the first region including second conductivity type impurities and having a front surface contacting the second electrode, the first region being electrically connected to the second electrode, the second region including second conductivity type impurities with a concentration lower than a concentration of the second conductivity type impurities at the front surface of the first region,
• wherein, the second semiconductor layer further comprises:
• a first peak concentration of the second conductivity type impurities at a first depth in the first region, and
• a second peak concentration of the second conductivity type impurities at a second depth in the region, and wherein
• the second depth is deeper than the first depth in a thickness direction from the front surface to the back surface, and
• the second peak concentration is lower than the first peak concentration.