Floating ring termination with reverse field plate and method of formation
AssigneeLittelfuse, Inc.
InventorKyoung Wook Seok
Life of this patent
Estimating the term…
Abstract
In one embodiment, a power semiconductor device may include a semiconductor substrate, wherein the semiconductor substrate comprises an active device region and a junction termination region. The power semiconductor device may also include a polysilicon layer, disposed over the semiconductor substrate. The polysilicon layer may include an active device portion, disposed over the active device region, and defining at least one semiconductor device; and a junction termination portion, disposed over the junction termination region, the junction termination portion defining a ring structure.
Claims16
A power semiconductor device, comprising:
- a semiconductor substrate, wherein the semiconductor substrate comprises an active device region and a junction termination region;
- and
- a polysilicon layer, disposed over the semiconductor substrate, wherein the polysilicon layer comprises:
- an active device portion, disposed over the active device region, and defining at least one semiconductor device;
- and
- a junction termination portion, disposed over the junction termination region, the junction termination portion defining a ring structure.
The method of claim 7, the ring structure comprising a plurality of polysilicon rings, arranged in concentric fashion.
The method of claim 7, wherein the junction termination region comprises a plurality of doped regions, arranged in concentric rings within the semiconductor substrate.
The method of claim 7, the semiconductor device comprising at least one insulated gate bipolar transistor (IGBT) device.
The method of claim 7, the semiconductor device comprising at least one metal oxide semiconductor field effect transistor (MOSFET) device.
The method of claim 7, the semiconductor device comprising a superjunction device, wherein a plurality of semiconductor trenches is disposed within the semiconductor substrate, wherein the semiconductor substrate comprises a first dopant type and the plurality of semiconductor trenches comprise a second dopant type.
A method of forming a semiconductor device, comprising:
- forming a polysilicon mask over a polysilicon layer, disposed on a semiconductor substrate, wherein the polysilicon mask comprises an active device portion, and a junction termination portion;
- implanting a P− dopant to form well regions in the semiconductor substrate, including an active device region, disposed subjacent the active device portion, and a junction termination region, disposed subjacent the junction termination portion;
- forming a P+ mask over the polysilicon mask;
- forming an N+ implantation mask over the polysilicon mask;
- forming a contact mask over the polysilicon mask;
- forming a metal mask over the polysilicon mask;
- and
- and forming a pad mask over the polysilicon mask.
Dependencies are inferred from the claim text.