Semiconductor device having diode devices with different barrier heights and manufacturing method thereof

A semiconductor device, comprising:

• a substrate;
• a first well region in the substrate;
• and
• a first doped region in the first well region, wherein the first doped region comprises a first portion and a second portion alternating with each other, and the first portion and the second portion have different doping concentrations.

A Schottky diode device, comprising:

• a substrate having a first conductivity type;
• a first well region having a second conductivity type disposed in the substrate;
• a first doped region having the second conductivity type in the first well region, the first doped region comprising a first portion and a second portion, and the first portion and the second portion having different doping concentrations;
• and
• a second doped region having the second conductivity type over the first doped region in the first well region,
• wherein the first doped region defines a first zone and a second zone separated from the first zone, and the second doped region is disposed in the second zone.