Semiconductor device

A semiconductor device comprising:

• first and second electrodes apart from each other;
• a capacitor dielectric film between the first electrode and the second electrode, and including a first dielectric film and a second dielectric film, the first dielectric film including a ferroelectric material, the second dielectric film including a paraelectric material and between the first dielectric film and the first electrode;
• and
• at least one interfacial film including a conductive material and in contact with the first dielectric film.

A semiconductor device comprising:

• a first insulation pattern including a first sidewall and a second sidewall adjacent to each other on a substrate;
• a second insulation pattern separate from the first insulation pattern on the substrate and including a third sidewall and a fourth sidewall adjacent to each other, the fourth sidewall of the second insulation pattern facing the second sidewall of the first insulation pattern;
• a first lower electrode extending along the first sidewall of the first insulation pattern and not extending along the second sidewall of the first insulation pattern;
• a second lower electrode extending along the third sidewall of the second insulation pattern and not extending along the fourth sidewall of the second insulation pattern;
• a capacitor dielectric film extending along the first lower electrode, the second lower electrode, the second sidewall of the first insulation pattern and the fourth sidewall of the second insulation pattern, and including a first dielectric film and a second dielectric film;
• and
• an upper electrode on the capacitor dielectric film,
• wherein the first dielectric film includes one of a monometal oxide film and a bimetal oxide film,
• the second dielectric film includes a paraelectric material, and
• a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.