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US 2020/0286984 A1Published application
Capacitors with ferroelectric/antiferroelectric and dielectric materials
AssigneeIntel Corporation
InventorsSou-Chi Chang, Chia-Ching Lin, Ashish Verma Penumatcha, Uygar E. Avci, Ian A. Young
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Abstract
Disclosed herein are capacitors with ferroelectric or antiferroelectric (FE/AFE) material and dielectric material, as well as related methods and devices. In some embodiments, a capacitor may include two electrodes, a layer of FE/AFE material between the electrodes, and a layer of dielectric material between the electrodes.
Claims20
A capacitor, comprising:
- a first electrode;
- a second electrode;
- and
- an inter-electrode stack between the first electrode and the second electrode, wherein the inter-electrode stack includes a first layer including a first material, the inter-electrode stack includes a second layer including a second material, the first material is a dielectric material, and the second material is a ferroelectric material or an antiferroelectric material.
1 more element
An integrated circuit (IC) die, comprising:
- a capacitor, including:
- a first electrode,
- a second electrode, and
- an inter-electrode stack between the first electrode and the second electrode, wherein the inter-electrode stack includes a first layer including a first material, the inter-electrode stack includes a second layer including a second material, the first material is a dielectric material, and the second material is a ferroelectric material or an antiferroelectric material.
1 more element
A computing device, comprising:
- an integrated circuit (IC) package including a memory device, wherein the memory device includes a plurality of memory cells, and an individual one of the memory cells includes:
- a transistor, and
- a capacitor including two electrodes, a layer of ferroelectric or antiferroelectric material between the electrodes, and a layer of dielectric material between the electrodes.
Dependencies are inferred from the claim text.