Complementary carbon nanotube field effect transistor and manufacturing method thereof

A complementary carbon nanotube field effect transistor comprising:

• a substrate;
• a first bottom gate electrode formed on the substrate;
• a first channel layer formed on the first bottom gate electrode of the substrate and made of a carbon nanotube;
• a first source electrode formed at one side of the first channel layer and made of a conductive material;
• a first drain electrode formed at the other side of the first channel layer and made of a conductive material;
• a conversion induction layer formed on the first channel layer between the first source electrode and the first drain electrode and configured to convert the first channel layer from a p-type to an n-type;
• and
• a protective layer configured to protect the conversion induction layer.

A manufacturing method of a complementary carbon nanotube field effect transistor, the manufacturing method comprising:

• (A) forming a first channel layer made of a carbon nanotube on a substrate;
• (B) forming a first source electrode made of a conductive material at one side of the first channel layer and forming a first drain electrode made of a conductive material at the other side of the first channel layer;
• (C) forming a conversion induction layer on the first channel layer between the first source electrode and the first drain electrode;
• (D) forming a protective layer on the conversion induction layer and converting the first channel layer from a p-type to an n-type by performing annealing on the conversion induction layer;
• and
• (E) forming a first gate electrode on the protective layer.