Storage device

A storage device comprising:

• a plurality of first wires;
• a plurality of second wires intersecting the plurality of first wires;
• and
• memory cells located in regions where the first wires and the second wires intersect each other,
• wherein each of the memory cells includes a resistance change element provided between one of the first wires and one of the second wires and an intermediate layer provided in any one of a position between the resistance change element and the one of the first wires and a position between the resistance change element and the one of the second wire, the intermediate layer containing at least one element of silicon (Si) and germanium (Ge), tellurium (Te), and aluminum (Al).