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US 2020/0286952 A1Published application
Semiconductor structure and manufacturing method of the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsHARRY-HAK-LAY CHUANG, SHENG-HUANG HUANG, KENG-MING KUO, HUNG CHO WANG
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Abstract
The present disclosure provides a semiconductor structure, including a memory region, a first metal line in the memory region, a magnetic tunneling junction (MTJ) cell over the first metal line, a carbon-based layer between the first metal line and the MTJ cell, a second metal line over the MTJ cell, a logic region adjacent to the memory region, wherein the logic region is free from a coverage of the carbon-based layer.
Claims20
A semiconductor structure, comprising:
- a memory region;
- a first metal line in the memory region;
- a magnetic tunneling junction (MTJ) cell over the first metal line;
- a carbon-based layer between the first metal line and the MTJ cell;
- a second metal line over the MTJ cell;
- a logic region adjacent to the memory region, wherein the logic region is free from a coverage of the carbon-based layer.
3 more elements
A semiconductor structure, comprising:
- a logic region;
- a memory region adjacent to the logic region;
- a first metal line in the memory region;
- a bottom electrode via over the first metal line;
- a magnetic tunneling junction (MTJ) cell over the bottom electrode via;
- a carbon-based layer between the first metal line and the MTJ cell;
- a second metal line over the MTJ cell;
- and
- a sidewall spacer laterally surrounding a sidewall of the MTJ cell and an upper portion of the bottom electrode via.
6 more elements
A semiconductor structure, comprising:
- a logic region;
- a memory region adjacent to the logic region;
- a first metal line in the memory region;
- a bottom electrode via over the first metal line;
- a magnetic tunneling junction (MTJ) cell over the bottom electrode via;
- a first etch stop layer between the first metal line and the MTJ cell, wherein a thickness of a first portion of the first etch stop layer directly under the MTJ cell is greater than a thickness of a second portion of the first etch stop layer free from a coverage of a vertical projection area of the MTJ cell;
- a second metal line over the MTJ cell.
4 more elements
Dependencies are inferred from the claim text.