Semiconductor apparatus and device

A semiconductor apparatus comprising:

• a first semiconductor component including a first semiconductor layer and a first insulator film over the first semiconductor layer;
• and
• a second semiconductor component including a second semiconductor layer and a second insulator film over the second semiconductor layer;
• wherein the first and the second semiconductor layers are stacked so that the first and the second insulator films are positioned between the first and the second semiconductor layers in a first direction,
• wherein the first and the second semiconductor components are bonded to each other by a first conductive portion disposed in a recessed portion formed in the first insulator film and a second conductive portion disposed in a recessed portion formed in the second insulator film,
• wherein the first conductive portion includes a first pad surrounded by the first insulator film in a plane perpendicular to the first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and the first semiconductor layer in the first direction, the first via is connected to a first conductor layer positioned between the first via and the first semiconductor layer in the first direction, and a distance between the first via and the first conductor layer is smaller than a distance between the first via and the second conductive portion,
• wherein the second conductive portion includes a second pad surrounded by the second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and the second semiconductor layer in the first direction, the second via is connected to a second conductor layer positioned between the second via and the second semiconductor layer in the first direction, and a distance between the second via and the second conductor layer is smaller than a distance between the second via and the first conductive portion,
• wherein at least one of the following relations (A), (B), (C), (D), and (E), and at least one of the following relations (α) and (β) are satisfied:
• La<Lb, (A)
• Wa>Wb, (B)
• La/Lb<Ta/Tb, (C)
• Pa/Pb<Wa/Wb, (D)
• La/Wa<Lb/Wb, (E)
• (α) the first conductor layer is mainly made of aluminum, and
• (β) the second conductor layer is mainly made of copper,
• where La is a dimension of the first via in the first direction, Lb is a dimension of the second via in the first direction, Ta is a dimension of the first pad in the first direction, Tb is a dimension of the second pad in the first direction, Wa is a dimension of the first via in a second direction perpendicular to the first direction, Wb is a dimension of the second via in the second direction, Pa is a dimension of the first pad in the second direction, and Pb is a dimension of the second pad in the second direction.

A semiconductor apparatus comprising:

• a first semiconductor component including a first semiconductor layer and a first insulator film over the first semiconductor layer;
• and
• a second semiconductor component including a second semiconductor layer and a second insulator film over the second semiconductor layer;
• wherein the first and the second semiconductor layers are stacked so that the first and the second insulator films are positioned between the first and the second semiconductor layers in a first direction,
• wherein the first and the second semiconductor components are bonded to each other by a first conductive portion disposed in a recessed portion formed in the first insulator film and a second conductive portion disposed in a recessed portion formed in the second insulator film,
• wherein the first conductive portion includes a first pad surrounded by the first insulator film in a plane perpendicular to the first direction, and a first via connected to the first pad so that the first via is positioned between the first pad and the first semiconductor layer in the first direction, the first via is connected to a first conductor layer positioned between the first via and the first semiconductor layer in the first direction, and a distance between the first via and the first conductor layer is smaller than a distance between the first via and the second conductive portion,
• wherein the second conductive portion includes a second pad surrounded by the second insulator film in a plane perpendicular to the first direction, and a second via connected to the second pad so that the second via is positioned between the second pad and the second semiconductor layer in the first direction, the second via is connected to a second conductor layer positioned between the second via and the second semiconductor layer in the first direction, and a distance between the second via and the second conductor layer is smaller than a distance between the second via and the first conductive portion,
• wherein at least one of the following relations (A), (C), (G), (H), (I), and (J), and at least one of the following relations (α) and (f) are satisfied:
• La<Lb, (A)
• La/Lb<Ta/Tb, (C)
• Ta>Tb, (G)
• La*Ta>Lb*Tb, (H)
• La−Lb<Ta−Tb, (I)
• La+Ta<Lb+Tb, (J)
• (α) the first conductor layer is mainly made of aluminum, and
• (β) the second conductor layer is mainly made of copper,
• where La is a dimension of the first via in the first direction, Lb is a dimension of the second via in the first direction, Ta is a dimension of the first pad in the first direction, and Tb is a dimension of the second pad in the first direction.