Solid-state imaging element, electronic device, and fabrication method

An electronic device comprising:

• a solid-state imaging element that includes
• a photoelectric conversion element disposed on a side of a first face of a semiconductor substrate,
• penetrating electrodes that are each connected to the photoelectric conversion element, the penetrating electrodes each being disposed between the first face of the semiconductor substrate and a second face thereof that is a face different from the first face,
• a transistor and a floating diffusion that are disposed in the second face, the transistor and the floating diffusion being connected to the photoelectric conversion element through the penetrating electrodes, and
• a dielectric layer that is formed between the penetrating electrodes in the second face, the dielectric layer being thicker than a gate insulating film of the transistor;
• a signal processing circuit that processes an output signal output from the solid-state imaging element;
• and
• an optical system that emits incident light into the solid-state imaging element.

A fabrication method by a fabricating apparatus, the method comprising:

• forming through-holes between a first face of a semiconductor substrate and a second face thereof that is a face different from the first face;
• forming a dielectric layer between the through-holes in the second face, the dielectric layer being thicker than a gate insulating film of a transistor formed in the second face;
• forming, in the second face, gate wiring that includes the transistor;
• forming penetrating electrodes each by burying a metal material film in each of the through-holes;
• and
• forming, in the first face, the photoelectric conversion element that is connected to the transistor and a floating diffusion through the penetrating electrodes.