Solid-state imaging element, method for manufacturing the same, and electronic apparatus

An electronic apparatus, comprising:

• a light detecting device configured to detect light;
• and
• a signal processor configured to process a signal output from the light detecting device,
• wherein the light detecting device includes:
• a silicon substrate including a plurality of photoelectric conversion regions, the plurality of photoelectric conversion regions including a first photoelectric conversion region and a second photoelectric conversion region;
• a pixel separation region disposed between the first photoelectric conversion region and the second photoelectric conversion region in a cross-sectional view;
• and
• a shallow trench isolation disposed adjacent to the pixel separation region in the cross-sectional view,
• wherein the pixel separation region extends to a surface of the silicon substrate opposite a light receiving surface of the silicon substrate,
• wherein the pixel separation region includes a first layer including polysilicon and a second layer including silicon oxide, and
• wherein, in the cross-sectional view, the first layer, the second layer, and the shallow trench isolation are arranged successively in a first direction.

A light detecting device, comprising:

• a substrate including a plurality of photoelectric conversion regions;
• a plurality of separation regions separating the plurality of photoelectric conversion regions,
• wherein each of the plurality of separation regions includes a polysilicon layer and a silicon oxide layer;
• and
• a shallow trench isolation disposed adjacent to the pixel separation region in a cross-sectional view,
• wherein, in the cross-sectional view, the polysilicon layer, the silicon oxide layer, and the shallow trench isolation are arranged successively in a first direction.