Imaging device

An imaging device comprising:

• a semiconductor substrate including
• a semiconductor region including an impurity of a first conductivity type,
• a first diffusion region that is in contact with the semiconductor region, that includes an impurity of a second conductivity type different from the first conductivity type, and that converts incident light into charges, and
• a second diffusion region that includes an impurity of the second conductivity type and that accumulates at least a part of the charges flowing from the first diffusion region;
• a first transistor that includes a first gate electrode located on the semiconductor substrate and that includes the second diffusion region as one of a source and a drain;
• a contact plug electrically connected to the second diffusion region;
• a capacitive element one end of which is electrically connected to the contact plug;
• and
• a second transistor that includes a second gate electrode located on the semiconductor substrate, the second gate electrode being electrically connected to the one end of the capacitive element.