Tft driving backplane

Abstract

Provided is a TFT driving backplane including, in top-to-bottom order, a sub-data line, a first insulating layer, a top capacitor plate, a second insulating layer and a bottom capacitor plate. In one side of the top capacitor plate is provided a notch filled upward by the first insulating layer provided with a first via extending vertically downward to the bottom capacitor plate. By moving the position where the sub-data line and the bottom capacitor plate are connected away from the top capacitor plate, holing is not required to be performed at the center of the capacitor and two-step opening alignment is avoided. Consequently, the requirement for alignment precision in photolithography is less critical, and the deviation due to two-step opening alignment is prevented. Meanwhile, by designing the margin and the one-way deviation, the short circuit in the capacitor can be avoided, and the effective capacitive area can be increased.

Dependencies are inferred from the claim text.