Semiconductor device, and manufacturing method thereof

A semiconductor device comprising:

• a first semiconductor layer;
• a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an impurity element applying one conductive type;
• a third semiconductor layer over the first semiconductor layer, the third semiconductor layer comprising an impurity element applying one conductive type;
• a first wiring electrically connected to the second semiconductor layer, the first wiring comprising a region extending to a first direction;
• and
• a second wiring comprising a region overlapping with the first semiconductor layer, the second wiring comprising a region extending to a second direction intersecting with the first direction,
• wherein the first wiring comprises a first conductive layer comprising Cu, and
• wherein the first conductive layer is electrically connected to the second semiconductor layer through a second conductive layer, the second conductive layer not comprising Cu.

A semiconductor device comprising:

• a first semiconductor layer;
• a second semiconductor layer over the first semiconductor layer, the second semiconductor layer comprising an impurity element applying one conductive type;
• a third semiconductor layer over the first semiconductor layer, the third semiconductor layer comprising an impurity element applying one conductive type;
• a first wiring electrically connected to the second semiconductor layer, the first wiring comprising a region extending to a first direction;
• and
• a second wiring comprising a region overlapping with the first semiconductor layer, the second wiring comprising a region extending to a second direction intersecting with the first direction,
• wherein the first wiring comprises a conductive layer comprising Cu, and
• wherein the conductive layer is not in contact with the second semiconductor layer.