Semiconductor structure

A semiconductor standard cell structure, comprising:

• an n-type active region and a p-type active region side by side disposed along a first direction;
• a plurality of gate strips extending from a bottom to a top of the semiconductor standard cell structure along a second direction perpendicular to the first direction;
• and
• a reserved region for metal routing, and the reserved region is free from overlapping the n-type active region and the p-type active region.

A semiconductor structure, comprising:

• a first standard cell including:
• an n-type active region and a p-type active region side by side disposed along a first direction;
• a plurality of gate strips extending from a bottom to a top of the first standard cell along a second direction perpendicular to the first direction, wherein within the first standard cell, each of the gate strips passes over only one of the n-type active region or the p-type active region of the first standard cell from a top view;
• and
• a reserved region for metal routing;
• and
• a second standard cell including:
• an n-type active region and a p-type active region side by side disposed along the first direction;
• a plurality of gate strips extending from a bottom to a top of the second standard cell along the second direction;
• and
• a reserved region for metal routing, and a height of the reserved region of the first standard cell is the same as a height of the reserved region of the second standard cell;
• wherein a number of the gate strips in the first standard cell is substantially the same as a number of the gate strips in the second standard cell.