Three-dimensional flash memory and manufacturing method therefor
AssigneeIndustry-University Cooperation Foundation Hanyang University
InventorYun Heub SONG
Life of this patent
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Abstract
A three-dimensional flash memory is provided, and technique to suppress interference caused by an inter-cell insulation layer in a vertical cell and to form a stable vertical channel layer, a technique to reduce a length of wire than a conventional three-dimensional flash memory for overcoming problems of deterioration of chip characteristics such as operation speed and power consumption and difficulty of wiring technique in the manufacturing process, and a technique to improve horizontal density of channel layers and ONO layers are proposed.
Claims19
A three-dimensional device of a three-dimensional flash memory, the three-dimensional device comprising:
- a plurality of horizontal electrode layers including a plurality of air gaps;
- and
- a plurality of vertical channel layers connected to the plurality of horizontal electrode layers, and perpendicular to the plurality of horizontal electrode layers,
- wherein the plurality of air gaps are formed between the plurality of horizontal electrode layers.
A three-dimensional device of a three-dimensional flash memory, the three-dimensional device comprising:
- a plurality of horizontal electrode layers including a plurality of air gaps;
- a plurality of vertical channel layers connected to the plurality of horizontal electrode layers and perpendicular to the plurality of horizontal electrode layers;
- and
- a stand preventing a short circuit between the plurality of horizontal electrode layers,
- wherein the plurality of air gaps are formed between the plurality of horizontal electrode layers.
(canceled)
A three-dimensional device of a three-dimensional flash memory, the three-dimensional device comprising:
- a plurality of horizontal electrode layers stacked to be configured for each vertical cell group;
- and
- a plurality of vertical channel layers formed in different hole sizes for each vertical cell group and perpendicular to the plurality of horizontal electrode layers.
A three-dimensional device of a three-dimensional flash memory, the three-dimensional device comprising:
- a plurality of horizontal electrode layers stacked to constitute each vertical cell group;
- and
- a plurality of vertical channel layers having different hole sizes by each vertical cell group and perpendicular to the plurality of horizontal electrode layers,
- wherein each of the vertical channel layer maintains a hole size constant within one vertical cell group.
(canceled)
A three-dimensional flash memory improving integration comprising:
- at least two channel layers formed to extend in one direction;
- at least two oxide-nitride-oxide (ONO) layers formed to extend in the one direction to surround the at least two channel layers, respectively;
- and
- a plurality of electrode layers stacked to be perpendicularly connected to each of the at least two ONO layers,
- wherein the at least two ONO layers are formed to be in contact with each other or to overlap at least a portion of the at least two ONO layers.
(canceled)
(canceled)
A three-dimensional flash memory improving integration comprising:
- at least two channel layers formed to extend in one direction;
- at least two charge storage layers formed to extend in the one direction to surround the at least two channel layers, respectively;
- and
- a plurality of electrode layers stacked to be perpendicularly connected to each of the at least two charge storage layers,
- wherein the at least two charge storage layers are formed to be in contact with each other or at least a portion of the at least two charge storage layers overlap.
(canceled)
(canceled)
A three-dimensional flash memory comprising:
- a common source line formed to extend in one direction;
- a plurality of electrode layers stacked vertically with respect to the common source line;
- and
- at least one intermediate circuit layer disposed between the plurality of electrode layers in an intermediate region of the common source line.
(canceled)
Dependencies are inferred from the claim text.