US 2020/0286913 A1 · SEMICONDUCTOR DEVICE

Abstract

A semiconductor device according to an embodiment includes a semiconductor substrate, a plurality of conductive layers extending in a first direction on the semiconductor substrate, and laminated in a third direction perpendicular to the first direction and a second direction at intervals in the second direction perpendicular to the first direction, and a passivation film which has several layers provided above the plurality of conductive layers. The passivation film has a first nitride film provided above the plurality of conductive layers, and a second nitride film provided on the first nitride film, and the second nitride film has the concave and convex shape which is repeated along the second direction.

Claims6

Dependent claims

A semiconductor device comprising:

a semiconductor substrate;
a plurality of conductive layers extending in a first direction on the semiconductor substrate, and laminated in a third direction perpendicular to the first direction and a second direction at intervals in the second direction perpendicular to the first direction;
and
a passivation film which has several layers provided above the plurality of conductive layers,
wherein the passivation film has a first nitride film provided above the plurality of conductive layers, and a second nitride film provided on the first nitride film, and the second nitride film has the concave and convex shape which is repeated along the second direction.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/564,673Filed 9 Sep 2019

Priority

JP 2019-0398135 Mar 2019

Published

10 Sep 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H10B 43/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 41/50
Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates: characterised by the boundary region between the core…
H10B 43/40
EEPROM devices comprising charge-trapping gate insulators: characterised by the peripheral circuit region

Semiconductor device

Life of this patent

Semiconductor device

Life of this patent

Abstract

Claims6