Three-dimensional memory device containing a channel connection strap and method for making the same

Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, a memory opening extending through the alternating sack, and a memory opening fill structure located within the memory opening. The memory opening fill structure includes a pedestal channel portion, a memory film overlying the pedestal channel portion, a vertical semiconductor channel located inside the memory film, and a channel connection strap that extends through an opening of the memory film and contacting the pedestal channel portion and the vertical semiconductor channel. The channel connection strap has a topmost surface located below a horizontal plane including a top surface of the vertical semiconductor channel. The channel connection strap portion may be formed by a selective semiconductor growth from physically exposed semiconductor surfaces, and may provide enhanced electrical connection between the pedestal channel portion and the vertical semiconductor channel.

Dependencies are inferred from the claim text.