US 2020/0286902 A1Published application

Semiconductor storage device

AssigneeToshiba Memory Corporation

InventorsNatsuki FUKUDA, Satoshi NAGASHIMA, Tetsu MOROOKA, Noritaka ISHIHARA

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Abstract

According to one embodiment, a semiconductor storage device includes a first charge storage part, a first insulating part, a second charge storage part, a second insulating part, a first select transistor, and a hollow part. The first charge storage part is at a first position separated from a surface of a substrate by a first distance in a third direction. The first select transistor is at a second position separated from the surface of the substrate by a second distance in the third direction. The second distance is greater than the first distance. The hollow part is up to a third position in the third direction separated from the surface of the substrate by a third distance in the third direction. The third distance is greater than or equal to the first distance and shorter than or equal to the second distance.

Claims20

Dependent claims

A semiconductor storage device comprising:

a substrate;
a first interconnection extending in a first direction;
a second interconnection extending in the first direction, the second interconnection being adjacent to the first interconnection in a second direction, the second direction intersecting the first direction;
a first channel part between the first interconnection and the second interconnection, the first channel part extending in a third direction, the third direction intersecting the first direction and the second direction;
a second channel part between the first interconnection and the second interconnection, the second channel part being adjacent to the first channel part in the second direction, the second channel part extending in the third direction;
a first charge storage part at a first position separated from a surface of the substrate by a first distance in the third direction, the first charge storage part being between the first interconnection and the first channel part;
a first insulating part between the first charge storage part and the first channel part;
a second charge storage part between the second interconnection and the second channel part;
a second insulating part between the second charge storage part and the second channel part;
a first select transistor at a second position separated from the surface of the substrate by a second distance in the third direction, the second distance being greater than the first distance;
a second select transistor above the second charge storage part in the third direction;
and
a hollow part between the first channel part and the second channel part,
wherein the hollow part is up to a third position separated from the surface of the substrate by a third distance in the third direction, the third distance being greater than or equal to the first distance and shorter than or equal to the second distance.

11 more elements

A semiconductor storage device comprising:

a substrate;
a first interconnection extending in a first direction;
a second interconnection extending in the first direction, the second interconnection being adjacent to the first interconnection in a second direction, the second direction intersecting the first direction;
a first channel part between the first interconnection and the second interconnection, the first channel part extending in a third direction, the third direction intersecting the first direction and the second direction;
a second channel part between the first interconnection and the second interconnection, the second channel part being adjacent to the first channel part in the second direction, the second channel part extending in the third direction;
a first charge storage part at a first position separated from a surface of the substrate by a first distance in the third direction, the first charge storage part being between the first interconnection and the first channel part;
a first insulating material between the first charge storage part and the first channel part, the first insulating part having a first insulation property, the first insulating part having a first thickness in the second direction;
a second charge storage part between the second interconnection and the second channel part;
a second insulating material between the second charge storage part and the second channel part, the second insulating material having the first insulation property;
a first select transistor at a second position separated from the surface of the substrate by a second distance in the third direction, the second distance being greater than the first distance;
a second select transistor above the second charge storage part in the third direction;
and
a third insulating material between the first channel part and the second channel part, the third insulating material having a second insulation property higher than the first insulation property, the third insulating material having a second thickness in the second direction, the second thickness being greater than the first thickness,
wherein the third insulating material is up to a third position separated from the surface of the substrate by a third distance in the third direction, the third distance being greater than or equal to the first distance and shorter than or equal to the second distance.

11 more elements

A semiconductor storage device comprising:

a substrate;
a first interconnection extending in a first direction;
a second interconnection extending in the first direction, the second interconnection being adjacent to the first interconnection in a second direction, the second direction intersecting the first direction;
a first channel part between the first interconnection and the second interconnection, the first channel part extending in a third direction, the third direction intersecting the first direction and the second direction;
a second channel part between the first interconnection and the second interconnection, the second channel part being adjacent to the first channel part in the second direction, the second channel part extending in the third direction;
a first charge storage part at a first position separated from a surface of the substrate by a first distance in the third direction, the first charge storage part being between the first interconnection and the first channel part;
a first insulating part between the first charge storage part and the first channel part;
a second charge storage part between the second interconnection and the second channel part;
a second insulating part between the second charge storage part and the second channel part;
a first select transistor at a second position separated from the surface of the substrate by a second distance in the third direction, the second distance being greater than the first distance;
a second select transistor above the second charge storage part in the third direction;
and
a hollow part between the first channel part and the second channel part, the hollow part being below the second position.

10 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/518,030Filed 22 Jul 2019
Priority: JP 2019-0431218 Mar 2019
Published: 10 Sep 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification15 codes

H10B 41/35
Characterised by the memory core region: with a cell select transistor, e.g. NAND
H10B 41/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/27
With source and drain on different levels, e.g. with sloping channels: the channels comprising vertical portions, e.g. U-shaped channels
H10B 43/35
Characterised by the memory core region: with cell select transistors, e.g. NAND

Family

US 10,910,388 B2Related patent
US 2020/0286902 A1This patent

From the US filing history. Foreign family members aren’t listed.

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